65c i s ymbol us2af us2bf us2df us2gf us2jf us2kf US2MF unit characteristi c -65 t o +150 c 2.0a s urface mount ultrafast diode 50 75 ns 35 70 140 280 420 560 800 v 50 100 200 400 600 800 1000 v 1.0 1.3 1. 7 v us2af ? US2MF features maximum r a tings and electrical characteristics @t a =25 c unless otherwise specified p eak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r rm s reverse voltage v r(rm s) av erage rectified output current @t l = o 2.0 a non-repet i tive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 50 a forward v oltage @i f = 2.0a v fm pe a k reverse current @t a = 25 c a t rated dc blocking voltage @t a = 100 c i rm 10 500 a revers e rec overy time (note 1) t rr t y pical junction capacitance (note 2) c j 25 pf t y pical thermal resistance (note 3) r jl 75 c /w operat i ng and storage temperature range t j, t stg note: 1. measured with i f = 0. 5a , i r = 1 .0a, i rr = 0.25a. see figure 5. 2. measured at 1.0 mhz and applied reverse voltage of 4.0 v dc. 3. mounted on p.c. board with 8.0mm 2 l and area. 1 of 2 us2af ? US2MF weight: 0.037 gr ams (approx.) case: smaf, molded plastic surge overload rating to 30a peak ultra-fast recovery time classification rating 94v-o low power loss ideally suited for automatic assembly features ! ! low f orward voltage drop, high efficiency ! ! ! ! plastic case material has ul flammability mechanical d a ta ! ! ter minals: solder plated, solderable per mil-std-750, method 2026 ! polarity: cathode band or cathode notch ! marking: type number ! ! lead free: for rohs / lead free version sma f 3.60 3.20 2.80 2.40 a b c d f dim m i n max a b c d e f g all di m ensions in mm e g 0.20 0.10 4.80 4.40 1.10 0.90 0.90 - 1.43 1.38 z ibo seno electronic engineering co., ltd. www.senocn.com a l l d a t a s h e e t
50v dc approx 50 ni (non-inductive) w 10 ni w 1.0 ni w oscilloscope (note 1) pulse generator (note 2) device under t est t rr settimebasefor10ns/cm +0.5a 0a -0.25a -1.0a notes: 1. rise time = 7.0ns max. input impedance = 1.0m , 22pf. 2. rise time = 10ns max. input impedance = 50 . w w fig. 5 reverse recovery time characteristic and test circuit (+) (+) (-) (-) 0.01 0.1 1.0 10 100 1000 0 20 40 60 80 100 120 140 i , instantaneous reverse current (ma) r percent of ra ted peak reverse voltage (%) fig. 4 typical reverse characteristics t = 100 c j t = 25 c j 0.01 0.1 1.0 10 0 0.4 0.8 i , instantaneous forward current (a) f v , inst antaneous forward voltage (v) fig. 2 typical forward characteristics f t - 25 c j pulse width = 300 s m 1.2 1.6 2.0 1 10 100 i , peak forward surge current (a) fsm number of cycles at 60hz fig. 3 forward surge current derating curve single half sine-w ave (jedec method) t = 150 c j 0 25 50 75 100 125 150 i a verage forward current (a) (av), t,lead temperature ( c) fig. 1 forward current derating curve l 2 of 2 us2af ? US2MF us2af ? US2MF us2jf ? US2MF us2af ? us2df 20 6 0 40 1.0 2.0 us2gf z ibo seno electronic engineering co., ltd. www.senocn.com a l l d a t a s h e e t
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